- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33274 > 2N5672-JQR-B (SEMELAB LTD) 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE PDF資料下載
參數(shù)資料
| 型號： | 2N5672-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 87K |
| 代理商： | 2N5672-JQR-B |
2N5672
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7506, ISSUE 2
Features
High Current & High Speed Switching
High
Reliability
Screening
Options
Available Including:-
Semelab
Space
Level
discrete
component
processing which is based on conformance &
screening levels of MIL-PRF-19500 & ESCC 5000
Applications
For high reliability general purpose
applications, where high speed & high
current switching and amplification is
required.
NPN HIGH POWER
SILICON TRANSISTOR
TO-3 (TO-204AE)
Pin 1 – Base
Pin 2 – Emitter Case – Collector
3 9 . 9 5 ( 1 . 5 7 3 )
m a x .
1 7 . 1 5 ( 0 . 6 7 5 )
1 6 . 6 4 ( 0 . 6 5 5 )
3 0 . 4 0 ( 1 . 1 9 7 )
3 0 . 1 5 ( 1 . 1 8 7 )
26
.6
7
(1
.0
50
)
m
ax
.
11
.1
8
(0
.4
40
)
10
.6
7
(0
.4
20
)
4 . 0 9 ( 0 . 1 6 1 )
3 . 8 4 ( 0 . 1 5 1 )
d i a .
2 p l c s .
2 0 . 3 2 ( 0 . 8 0 0 )
1 8 . 8 0 ( 0 . 7 4 0 )
d i a .
7.
87
(0
.3
10
)
6.
99
(0
.2
75
)
12
.0
7
(0
.4
75
)
11
.3
0
(0
.4
45
)
1.
78
(0
.0
70
)
1.
52
(0
.0
60
)
1 . 5 7 ( 0 . 0 6 2 )
1 . 4 7 ( 0 . 0 5 8 )
d i a .
2 p l c s .
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
T
CASE = 25°C unless otherwise stated
V
CBO
Collector - Base Voltage
150V
V
CEO
Collector - Emitter Voltage (I
B = 0)
120V
V
EBO
Emitter – Base Voltage (I
C = 0)
7.0V
I
C
Continuous Collector Current
30A
I
B
Base Current
10A
P
tot
Total Power Dissipation at
T
case ≤ 25°C
140W
T
amb ≤ 25°C
6W
T
stg
Operating and Storage Temperature Range
-65 to +200°C
T
j
Junction Temperature
200°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5672-QR | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 2N5672 | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 2N5672 | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5672 | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5672 | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5675 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
| 2N5676 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N5677 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 5A 3PIN TO-61 - Bulk |
| 2N5678 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 10A 3PIN TO-63 - Bulk |
| 2N5679 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。