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參數(shù)資料
| 型號： | 2N5679 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 中文描述： | 進(jìn)步黨/ npn型高壓硅晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | 2N5679 |
DESCRIPTION
The 2N5679 and 2N5680 are silicon
expitaxial planar PNP transistors in
jedec TO-39 metal case intended for
use as drivers for high power transis-
tors in general purpose, amplifier and
switching circuit
The complementary NPN types are the
2N5681 and 2N5682 respectively
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25°c unless otherwise stated
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
￡
25°C
2N5680
-120V
-120V
2N5679
-100V
-100V
2N5679
2N5680
LA B
S E M E
Prelim. 3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPNP SILICON
TRANSISTORS
T
amb
￡
25°C
T
stg
T
j
Operating and Storage Temperature Range
Junction temperature
-4V
-1A
-0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO-39
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5680 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5679 | Small Signal Transistors |
| 2N5680 | Small Signal Transistors |
| 2N5680 | PNP SILICON TRANSISTORS |
| 2N5681 | NPN SILICON TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5679_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:PNP SILICON TRANSISTORS |
| 2N5679JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N5680 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5680 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5681 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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