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參數資料
| 型號： | 2N5680X |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | METAL, TO-39, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | 2N5680X |
DESCRIPTION
The 2N5680X is a silicon epitaxial planar
PNP transistors in jedec TO-39 metal case
intended for use as drivers for high power
transistors in general purpose,
amplifier and switching circuit
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°c unless otherwise stated
2N5680X
Document Number 4324
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
PNP SILICON
TRANSISTORS
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC
Continuous Collector Current
IB
Base Current
Ptot
Total Dissipation at
Tcase ≤ 25°C
Tamb ≤ 25°C
Tstg
Operating and Storage Temperature Range
Tj
Junction temperature
-120V
-4V
-1A
-0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
TO-39 (TO-205AD)
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
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| 2N5680 | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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| 2N5682-QR-B | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5682.MODE1 | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5681 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5681SMD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
| 2N5682 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5682 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
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