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參數(shù)資料
| 型號(hào)： | 2N5682 |
| 英文描述： | Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶體管（TO-39金屬封裝，用于通用、放大器、開關(guān)電路）) |
| 中文描述： | Expitaxial平面NPN晶體管在電子元件工業(yè)聯(lián)合會(huì)- 39金屬外殼（大功率，外延平面npn型晶體管（TO - 39封裝金屬封裝，用于通用，放大器，開關(guān)電路）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | 2N5682 |
DESCRIPTION
The 2N5681 and 2N5682 are silicon
expitaxial planar NPN transistors in
jedec TO-39 metal case intended for
use as drivers for high power transis-
tors in general purpose, amplifier and
switching circuits
The complementary PNP types are the
2N5679 and 2N5680 respectively
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25°c unless otherwise stated
V
CBO
Collector – Base Voltage(I
E
= 0)
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
￡
25°C
2N5682
120V
120V
2N5681
100V
100V
2N5681
2N5682
Prelim.3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN SILICON
TRANSISTORS
T
amb
￡
25°C
T
stg
T
j
Operating and Storage Temperature Range
Junction temperature
4V
1A
0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO-39
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5681 | SILICON NPN TRANSISTORS |
| 2N5682 | SILICON NPN TRANSISTORS |
| 2N5681 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5682 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5681 | Small Signal Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5682 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5683 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR PNP -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:-50A; DC Current Gain hFE:15; Operating Temperature Min:-65C ;RoHS Compliant: Yes |
| 2N5684 | 功能描述:兩極晶體管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5684/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Current Complementary Silicon Power Transistors |
| 2N5684_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
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