- 您現在的位置：買賣IC網 > PDF目錄55782 > 2N5685 (MICROSEMI CORP) 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA PDF資料下載
參數資料
| 型號： | 2N5685 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數： | 1/2頁 |
| 文件大小： | 30K |
| 代理商： | 2N5685 |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2137 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2137: RDS(on) = 2.4
(VGS = 10 V, ID = 2.0 A)
Low Ciss
Ciss = 550 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)*
ID(pulse)
±16
A
Total Power Dissipation (Tc = 25 C)
PT1
30
W
Total Power Dissipation (TA = 25 C)
PT2
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
4.0
A
Single Avalanche Energy**
EAS
5.3
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2137
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.1
1.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.1
4±0.2
15.0±0.3
12.0±
0.2
13.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Document No. TC-2508
(O. D. No. TC-8067)
Date Published December 1994 P
Printed in Japan
1994
DATA SHEET
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 2N5729 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5784-SM | 3.5 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N5730 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-59 |
| 2N5733 | 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5685_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON TRANSISTOR |
| 2N5686 | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5686G | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。