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參數(shù)資料
| 型號： | 2N5786 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SILICON EPITAXIAL NPN TRANSISTOR |
| 中文描述： | 3500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | HERMETIC SEALED, TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | 2N5786 |
Prelim. 8/96
2N5786
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
V
CBO
V
CER(sus)
V
CEO(sus)
V
EBO
I
C
I
B
P
D
Collector – Base Voltage
Collector – Emitter Sustaining Voltage
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Collector Current
Total Device Dissipation
R
BE
= 100
W
T
A
= 25°C
Derate above 25°C
T
C
= 25°C
Derate above 25°C
P
D
Total Device Dissipation
T
J
, T
STG
T
L
Operating Junction and Storage Temperature Range
Lead temperature,
3
1
/
32
”
(0.8mm) from seating plane for 10 s max.
45V
45V
40V
3.5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
( 00 . 8 9
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5 °
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5786_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
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| 2N5793 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 0.6A 6PIN TO-78 - Bulk |
| 2N5794 | 制造商:Microsemi Corporation 功能描述:NPN DUAL TRANSISTORS TO-78 LAW - Bulk |
| 2N5794U | 功能描述:兩極晶體管 - BJT Dual NPN Transistor 6 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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