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參數(shù)資料
| 型號(hào)： | 2N5883 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon PNP Power Transistor(25A，200W，60V（集電極-發(fā)射極），補(bǔ)償型硅PNP功率晶體管) |
| 中文描述： | 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 127K |
| 代理商： | 2N5883 |
Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 10
1
Publication Order Number:
2N5883/D
PNP 2N5883, 2N5884*,
NPN 2N5885, 2N5886*
Preferred Device
Complementary Silicon
High-Power Transistors
. . . designed for general–purpose power amplifier and switching
applications.
Low Collector–Emitter Saturation Voltage –
V
CE(sat)
= 1.0 Vdc, (max) at I
C
= 15 Adc
Low Leakage Current
I
CEX
= 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain –
h
FE
= 20 (min) at I
C
= 10 Adc
High Current Gain Bandwidth Product –
f
= 4.0 MHz (min) at I
C
= 1.0 Adc
MAXIMUM RATINGS (No
All above values most or exceed present JEDEC registered data.
CEO
2N5883
2N5884
CB
EB
I
B
P
D
200
Continuous
Peak
7.5
C
25
50
Adc
Base Current
Derate above 25
°
C
Operating and Storage Junction
Total Device Dissipation @ T
C
=
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
0.875
°
C/W
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
25 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS 60 – 80 V 200 W
MARKING
DIAGRAM
CASE 1–07
TO–204AA
(TO–3)
xxxxxxxxxx
CCCCC
AWLYYWW
xx
A
WL
YY
WW
CCCCC = Non USA Country Code
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
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PDF描述 |
|---|---|
| 2N5884 | Complementary Silicon High Power Transistors(補(bǔ)償型硅高功率晶體管) |
| 2N5885 | Complementary Silicon NPN Power Transistor(25A，200W，60V（集電極-發(fā)射極），補(bǔ)償型硅NPN功率晶體管) |
| 2N5886 | Complementary Silicon NPN Power Transistor(25A，200W，80V（集電極-發(fā)射極），補(bǔ)償型硅NPN功率晶體管) |
| 2N5903 | MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5883 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3 |
| 2N5883/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors |
| 2N5883G | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5884 | 功能描述:兩極晶體管 - BJT PNP Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5884G | 功能描述:兩極晶體管 - BJT 25A 80V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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