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參數資料
| 型號： | 2N5884 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數： | 1/6頁 |
| 文件大小： | 275K |
| 代理商： | 2N5884 |
1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon
High-Power Transistors
. . . designed for general–purpose power amplifier and switching applications.
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain —
hFE = 20 (min) at IC = 10 Adc
High Current Gain Bandwidth Product —
f
τ = 4.0 MHz (min) at IC = 1.0 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5883
2N5885
2N5884
2N5886
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
25
50
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
200
1.15
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.875
_C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values most or exceed
present JEDEC registered data.
200
0
25
50
75
100
125
150
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
175
100
75
50
125
150
25
175
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5883/D
Motorola, Inc. 1995
2N5883
2N5884
2N5885
2N5886
*Motorola Preferred Device
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 VOLTS
200 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
PNP
NPN
REV 7
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5884G | 功能描述:兩極晶體管 - BJT 25A 80V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885 | 功能描述:兩極晶體管 - BJT 25A 60V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885G | 功能描述:兩極晶體管 - BJT 25A 60V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5886 | 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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