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參數資料
| 型號： | 2N6036 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 417K |
| 代理商： | 2N6036 |
2N6036
PNP Darlington
Power Transistor
Features
This device is designed for general purpose amplifier and low-speed
switching applications.
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
Peak
4.0
8.0
A
IB
Base Current
100
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
40
0.32
W
W/
OC
PD
Total Device Dissipation
Derate above 25
OC
1.5
0.012
W
W/
OC
RJC
Thermal Resistance, Junction to Case
3.12
OC/W
RJA
Thermal Resistance, Junction to Ambient
83.3
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(1)
(IC=100mAdc, IE=0)
80
---
Vdc
ICEO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
---
100
uAdc
ICEX
Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=80Vdc, VEB(off)=1.5Vdc, TC=125
OC)
---
100
500
uA
mA
ICBO
Collector-Cutoff Current
(VCB=80Vdc, IE=0)
---
0.5
mAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
2.0
mAdc
*Indicates JEDEC Registered Data