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參數(shù)資料
| 型號(hào)： | 2N6071A |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
| 中文描述： | 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 81K |
| 代理商： | 2N6071A |
2N6071, A, B
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
TO-126 CASE
Central
Semiconductor Corp.
TM
R0 (27-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TJ=25°C unless otherwise noted)
2N6071
2N6071A
2N6071B
200
2N6073
2N6073A
2N6073B
400
4.0
30
3.7
10
0.5
5.0
-40 to +150
-40 to +110
3.5
75
2N6075
2N6075A
2N6075B
600
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
PGM
PG(AV)
VGM
Tstg
TJ
Θ
JC
Θ
JA
TL
UNITS
V
A
A
A
2
s
W
W
V
°C
°C
°C/W
°C/W
°C
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak One Cycle Surge (60Hz, TJ=110°C)
I
2
t Value for Fusing (t=8.3ms)
Peak Gate Power (TC=85°C)
Average Gate Power (t=8.3ms, TC=85°C)
Peak Gate Voltage (TC=85°C)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature
260
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
A Series
TYP MAX
B Series
TYP MAX
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IGT
IGT
IGT
IGT
IGT
IGT
IGT
IH
IH
VGT
VGT
VTM
ton
dv/dt
TEST CONDITIONS
VD=Rated VDRM, VRRM, TJ=25°C
VD=Rated VDRM, VRRM, TJ=110°C
VD=12V, RL=100
,
QUAD I, TJ=25°C
VD=12V, RL=100
,
QUAD II, TJ=25°C
VD=12V, RL=100
,
QUAD III, TJ=25°C
VD=12V, RL=100
,
QUAD IV, TJ=25°C
VD=12V, RL=100
,
QUAD I, TJ= -40°C
VD=12V, RL=100
,
QUAD II, TJ= -40°C
VD=12V, RL=100
,
QUAD III, TJ= -40°C
VD=12V, RL=100
,
QUAD IV, TJ= -40°C
VD=12V, IT=1.0A, TJ=25°C
VD=12V, IT=1.0A, TJ= -40°C
VD=12V, RL=100
,
TJ=25°C, QUAD I, II, III, IV
VD=12V, RL=100
,
TJ= -40°C, QUAD I, II, III, IV
ITM=6.0A
ITM=14A, IGT=100mA
VD= Rated VDRM, ITM=5.7A
,
TJ=85°C
TYP MAX
UNITS
μA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
μs
V/μs
10
2.0
30
-
30
-
60
-
60
-
30
70
2.0
2.5
2.0
10
2.0
5.0
5.0
5.0
10
20
20
20
30
15
30
2.0
2.5
2.0
10
2.0
3.0
3.0
3.0
5.0
15
15
15
20
15
30
2.0
2.5
2.0
1.5
5.0
1.5
5.0
1.5
5.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6071B | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
| 2N6073 | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
| 2N6073A | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
| 2N6073B | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
| 2N6075 | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6071A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 2N6071AG | 功能描述:雙向可控硅 THY 4A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6071AG | 制造商:ON Semiconductor 功能描述:Triac |
| 2N6071ATG | 功能描述:雙向可控硅 SENSITIVE GATE RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6071B | 功能描述:雙向可控硅 THY 4A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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