- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371467 > 2N6240 (MOTOROLA INC) Silicon controlled Rectifiers Reverse Blocking Triode Thyristors PDF資料下載
參數(shù)資料
| 型號： | 2N6240 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon controlled Rectifiers Reverse Blocking Triode Thyristors |
| 中文描述： | 4.082 A, 400 V, SCR, TO-225AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | 2N6240 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1999
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume consumer applications such as
temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Recommended Electrical Replacement for C106
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
*Repetitive Peak Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave)
(RGK = 1000 ohms, TC = –40 to +110
°
C)
VDRM
or
VRRM
400
Volts
*Non–repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, RGK = 1000 ohms,
TC = –40
°
to +110
°
C)
VRSM
450
Volts
*Average On–State Current
(TC = –40 to + 90
°
C)
(TC = +100
°
C)
IT(AV)
2.6
1.6
Amps
*Surge On–State Current
(1/2 Sine Wave, 60 Hz, TC = +90
°
C)
(1/2 Sine Wave, 1.5 ms, TC = +90
°
C)
ITSM
25
35
Amps
Circuit Fusing
(t = 8.3 ms)
I2t
2.6
A2s
*Peak Gate Power
(Pulse Width = 10
μ
s, TC = 90
°
C)
PGM
0.5
Watts
*Indicates JEDEC Registered Data.
(continued)
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by 2N6240/D
SEMICONDUCTOR TECHNICAL DATA
CASE 77-08
(TO-225AA)
STYLE 2
SCRs
4 AMPERES RMS
400 VOLTS
K
A
G
A
K
A
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6247 | SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS |
| 2N6247 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| 2N6255 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 2N6257 | TO-3 Power Package Transistors (NPN) |
| 2N6371 | TO-3 Power Package Transistors (NPN) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6240/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Controlled Rectifier |
| 2N6241 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON CONTROLLED RECTIFIERS |
| 2N6245 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. |
| 2N6246 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 5A 3PIN TO-3 - Bulk 制造商:n/a 功能描述:2N6246 制造商:RCA 功能描述: |
| 2N6247 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 15A 3PIN TO-3 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。