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參數(shù)資料
| 型號： | 2N6303-JQR-A |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N6303-JQR-A |
2N6303
Bipolar PNP Device.
V
CEO =
120V
I
C = 0.5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
120
V
I
C(CONT)
0.5
A
h
FE
@ 2/1 (V
CE / IC)
40
150
-
f
t
30M
Hz
P
D
1
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar PNP Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6304 | 制造商:Motorola 功能描述:2N6304 MOT |
| 2N6305 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N6306 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 8A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N6306 GP BJTs |
| 2N6307 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Transistors |
| 2N6308 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:125W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:2 ;RoHS Compliant: Yes |
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