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參數資料
| 型號： | 2N6303 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP Power Transistors |
| 中文描述： | 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 56K |
| 代理商： | 2N6303 |
MSC1062.PDF 05-25-99
2N6303
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CEO
*
Collector-Emitter Voltage
V
CB
*
Collector-Base Voltage
V
EB
*
Emitter-Base Voltage
I
C
*
Peak Collector Current
I
C
*
Continuous Collector Current
I
B
*
Base Current
T
STG
*
Storage Temperature
T
J
*
Operating Junction Temperature
P
D
*
Total Device Dissipation
T
C
= 25
°
C
Derate above 25
°
C
P
D
*
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
Thermal Resistance
Junction to Case
Junction to Ambient
CHARACTERISTIC
VALUE
-
80
-
80
-
4.0
10
3.0
0.5
-65 to 200
-65 to 200
6.0
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°
C
°
C
Watts
34.3
1.0
mW/
°
C
Watts
θ
JC
5.71
29
175
mW/
°
C
°
C/W
°
C/W
Silicon PNP Power
Transistors
TO-5
APPLICATIONS:
High-Speed Switching
Medium-Current Switching
High-Frequency Amplifiers
FEATURES:
Collector-Emitter Sustaining Voltage: V
CEO(sus)
=
-
80 Vdc (Min)
DC Current Gain: h
FE
= 30-150 @ I
C
= 1.5 Adc
Low Collector-Emitter Saturation Voltage:
V
CE(sat)
=
-
0.75 Vdc @ I
C
= 1.5 Adc
High Current-Gain - Bandwidth Product: f
T
= 90 MHz (Typ)
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200
°
C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
*
Indicates JEDEC registered data.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6304 | 制造商:Motorola 功能描述:2N6304 MOT |
| 2N6305 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N6306 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 8A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N6306 GP BJTs |
| 2N6307 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Transistors |
| 2N6308 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:125W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:2 ;RoHS Compliant: Yes |
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