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參數資料
| 型號： | 2N6307 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 88K |
| 代理商： | 2N6307 |
2N6307
NPN Silicon
High Voltage
Transistors
Features
High current capability
Fast switching speed
High power TO-3 package
Horizontal deflection colour TV
Switching regulators
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
400
V
VCES
Collector- Emitter Voltage
1000
V
VEBO
Emitter-Base Voltage
8.0
V
IC
Collector Current
10
A
ICM
Peak Collector Current
15
A
IB
Base Current
3.0
A
PC
Collector power dissipation
100
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0)
1000
---
Vdc
ICES
Collector Cutoff Current
(VCE=1000Vdc, VBE=0)
---
1.0
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=8.0Vdc, IC=0)
---
1.0
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio*
(IC=8.0A dc, V CE=5.0Vdc)
15
---
VCE(sat)
Collector-Emitter Saturation Voltage*
(IC=8.0Adc, IB=2.5Adc)
---
3.3
Vdc
VBE(sat)
Base-Emitter Saturation Voltage*
(IC=8.0Adc,IB=2.5Adc)
---
2.2
Vdc
fT
Transition Frequency
(IC=0.5A dc, VCE=10V dc)
---
10
---
MHz
ton
Turn on Time
(IC=5.0A dc, VCE=250Vdc,
IB1=1.0A dc)
---
0.2
---
us
tF
Full time
(VCE=40V, IC=8.0A, IB1=IB2=2.5A)
---
1.0
us
tS
Storage Time
Fall Time
IC=5.0A , VCE=250V,
IB1=IB2=1.0A
---
1.7
0.3
us
*Pulsed: Pulse duration=300us, duty cycle 1.5%
TO-3
A
N
E
D
C
K
PIN 1.
BASE
PIN 2.
EMITTER
CASE.
COLLECTOR
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
1.550
REF
39.37
REF
B
-----
1.050
-----
26.67
C
.250
.335
6.35
8.51
D
.038
.043
0.97
1.09
E
0.55
0.70
1.40
1.77
G
.430
BSC
10.92
BSC
H
.215
BSC
5.46
BSC
K
.440
.480
11.18
12.19
L
.665
BSC
16.89
BSC
N
-----
.830
-----
21.08
Q
.151
.165
3.84
4.19
U
1.187
BSC
30.15
BSC
V
.131
.188
3.33
4.77
H
V
U
L
G
B
Q
1
2
www.mccsemi.com
Revision: 2
2003/04/30
omponents
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Street Chatsworth
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6308 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:125W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:2 ;RoHS Compliant: Yes |
| 2N6308 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N6312 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Power Transistors |
| 2N6313 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2N6314 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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