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參數資料
| 型號： | 2N6349 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACS Silicon Bidirectional Triode Thyristors |
| 中文描述： | 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2N6349 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
For 400 Hz Operation, Consult Factory
12 Ampere Devices Available as 2N6342A thru 2N6349A
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = –40 to +110
°
C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
VDRM
200
400
600
800
Volts
*RMS On-State Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +80
°
C)
(TC = +90
°
C)
IT(RMS)
8
4
Amps
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80
°
C)
Preceded and followed by Rated Current
ITSM
100
Amps
Circuit Fusing
(t = 8.3 ms)
I2t
40
A2s
*Peak Gate Power (TC = +80
°
C, Pulse Width = 2
μ
s)
*Average Gate Power (TC = +80
°
C, t = 8.3 ms)
*Peak Gate Current
PGM
PG(AV)
IGM
VGM
TJ
Tstg
20
Watts
0.5
Watt
2
Amps
*Peak Gate Voltage
10
Volts
*Operating Junction Temperature Range
–40 to +125
°
C
*Storage Temperature Range
–40 to +150
°
C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Order this document
by 2N6342/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6344AG | Triacs Silicon Bidirectional Thyristors |
| 2N6348AG | Triacs Silicon Bidirectional Thyristors |
| 2N6349AG | Triacs Silicon Bidirectional Thyristors |
| 2N6344A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
| 2N6348A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6349A | 功能描述:雙向可控硅 THY 12A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6349AG | 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N634A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-9 |
| 2N635 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9 |
| 2N6350 | 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 5A 4-Pin TO-33 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 80V 5A 4PIN TO-33 - Bulk |
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