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參數資料
| 型號： | 2N6353 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 中文描述： | 5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 55K |
| 代理商： | 2N6353 |
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 472
Devices
Qualified Level
2N6350
2N6351
2N6352
2N6353
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N6350
2N6352
80
80
2N6351
2N6353
150
150
12
6.0
0.5
5.0
10
(1)
2N6352
2N6353
2.0
(4)
25
(5)
-65 to +200
Units
Collector-Emitter Voltage
Collector-Base Voltage
V
CER
V
CBO
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Emitter-Base Voltage
V
EBO
Base Current
I
B
Collector Current
I
C
2N6350
2N6351
1.0
(2)
5.0
(3)
Total Power Dissipation @ T
A
= 25
0
C
@ T
C
= 100
0
C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
P
T
W
W
0
C
T
J
,
T
stg
Characteristics
Symbol
2N6350
2N6351
20
2N6352
2N6353
4.0
Unit
Thermal Resistance, Junction-to-Case
1) Applies for t
p
≤
10 ms, Duty cycle
≤
50%
2) Derate linearly @ 5.72 mW/
0
C above T
A
> 25
0
C
3) Derate linearly @ 50 mW/
0
C above T
C
> 100
0
C
4) Derate linearly @ 11.4 mW/
0
C above T
A
> 25
0
C
5)
Derate linearly @ 250 mW/
0
C above T
C
> 100
0
C
R
θ
JC
0
C/W
2N6350, 2N6351
TO-33*
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 25 mAdc, R
B1E
= 2.2 k
, R
B2E
= 100
Symbol
Min.
Max.
Unit
2N6350, 2N6352
2N6351, 2N6353
V
(BR)
CER
80
150
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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