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參數資料
| 型號： | 2N6388 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium Power Silicon Transistors(10A，65W，80V（集電極-發射極），塑料，硅NPN中等功率晶體管) |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 141K |
| 代理商： | 2N6388 |
Plastic MediumPower
Silicon Transistors
. . . designed for general
purpose amplifier and low
speed
switching applications.
High DC Current Gain —
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector
Emitter Sustaining Voltage
@ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) — 2N6387
= 80 Vdc (Min) — 2N6388
Low Collector
Emitter Saturation Voltage —
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc — 2N6387, 2N6388
Monolithic Construction with Built
In Base
Emitter Shunt Resistors
TO
220AB Compact Package
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
Collector Current — Continuous
I
C
10
@ T
= 25 C
Derate above 25 C
B
0.52
W/ C
Derate above 25 C
D
0.016
C
Operating and Storage Junction,
T
, T
65 to +150
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 11
1
Publication Order Number:
2N6387/D
2N6387
2N6388
*ON Semiconductor Preferred Device
DARLINGTON
8 AND 10 AMPERE
NPN SILICON
POWER TRANSISTORS
60
80 VOLTS
65 WATTS
*
CASE 221A
09
TO
220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6388 | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| 2N6388_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR |
| 2N6388D4(8110) | 制造商:STMicroelectronics 功能描述:Low-Frequency Power Silicon NPN BJT 制造商:STMicroelectronics 功能描述:2N6388D4(8110) - Bulk |
| 2N6388G | 功能描述:達林頓晶體管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N638A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 5A I(C) | TO-3 |
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