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參數資料
| 型號： | 2N6399 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 12 Ampere RMS Reverse Blocking Thyristor(12A（均方根值），800V硅控整流器反向截止晶閘管) |
| 中文描述： | 12 A, 800 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 118K |
| 代理商： | 2N6399 |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 5
1
Publication Order Number:
2N6394/D
2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS*
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off
State Voltage (Note 1)
(T
J
=
40 to 125
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
V
DRM,
V
RRM
50
100
400
800
V
On-State RMS Current
(180
°
Conduction Angles; T
C
= 90
°
C)
I
T(RMS)
12
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 90
°
C)
I
TSM
100
A
Circuit Fusing (t = 8.3 ms)
I
2
t
40
A
2
s
Forward Peak Gate Power
(Pulse Width
≤
1.0 s, T
C
= 90
°
C)
P
GM
20
W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 90
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤
1.0 s, T
C
= 90
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
*Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
G
A
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
TO
220AB
CASE 221A
STYLE 3
1
2
3
4
MARKING
DIAGRAM
YY WW
639x
x
YY
WW = Work Week
= 4, 5, 7 or 9
= Year
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6400 | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），50V硅控整流器反向截止晶閘管) |
| 2N6401 | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），100V硅控整流器反向截止晶閘管) |
| 2N6402 | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），200V硅控整流器反向截止晶閘管) |
| 2N6403 | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），400V硅控整流器反向截止晶閘管) |
| 2N6404 | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），600V硅控整流器反向截止晶閘管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6399G | 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6399G | 制造商:ON Semiconductor 功能描述:SCR Thyristor |
| 2N6399TG | 功能描述:SCR 12A 800V RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6400 | 功能描述:SCR 50V 16A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6400/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers |
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