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參數資料
| 型號： | 2N6488 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(15A，75W，80V（集電極-發射極），補償型，硅NPN功率晶體管) |
| 中文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 136K |
| 代理商： | 2N6488 |
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general
purpose amplifier and switching
applications.
DC Current Gain Specified to 15 Amperes —
h
FE
= 20
150 @ I
C
= 5.0 Adc
= 5.0 (Min) @ I
C
= 15 Adc
Collector
Emitter Sustaining Voltage —
V
CEO(sus)
= 60 Vdc (Min)
2N6487, 2N6490
= 80 Vdc (Min)
2N6488, 2N6491
High Current Gain — Bandwidth Product
f
T
= 5.0 MHz (Min) @ I
C
= 1.0 Adc
TO
220AB Compact Package
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
(1) Indicates JEDEC Registered Data.
MAXIMUM RATINGS (1)
V
I
C
I
B
P
D
2N6487
5.0
15
5.0
75
2N6488
Vdc
Adc
Watts
Emitter
Base Voltage
Collector Current — Continuous
Total Power Dissipation @ T
C
= 25 C
Base Current
Adc
Derate above 25 C
0.014
W/ C
70
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 11
1
Publication Order Number:
2N6487/D
2N6487
2N6488
PNP
2N6490
2N6491
*ON Semiconductor Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60
80 VOLTS
75 WATTS
*
*
CASE 221A
09
TO
220AB
NPN
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6488G | 功能描述:兩極晶體管 - BJT 15A 80V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6489 | 制造商:n/a 功能描述:2N6489 S3B2F 制造商:Harris Corporation 功能描述: |
| 2N6490 | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N649093 | 制造商:Harris Corporation 功能描述: |
| 2N6490G | 功能描述:兩極晶體管 - BJT 15A 60V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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