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參數資料
型號: 2N6496-T257
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: 15 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-257
文件頁數: 1/2頁
文件大小: 26K
代理商: 2N6496-T257
LAB
SEME
2N6496–T257
Prelim. 2/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
HIGH CURRENT
HIGH POWER
HIGH SPEED
NPN SILICON TRANSISTOR
Designed for switching and amplifier
circuits in industrial and commercial
applications.
VCBO
Collector – Base Voltage
VCER(sus)
Collector – Base Sustaining Voltage RBE 50 W
VCEO(sus)
Collector – Base Sustaining Voltage With Base Open
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
IB
Continuous Base Current
PD
Total Device Dissipation at TC = 25°C
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
TL
Lead Soldering Temperature (0.8mm from case for 10 secs.)
RqJC
Thermal Resistance Junction – Case
150V
130V
110V
7V
15A
5A
80W
–65 to 200°C
–65 to 175°C
230°C
1.875°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO–257 Package.
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
12 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.
41
(
0
.4
1
0
)
10.
92
(
0
.4
3
0
)
13.
3
8
(
0
.527
)
13.
6
4
(
0
.537
)
1
6
.3
8
(
0
.645)
1
6
.8
9
(
0
.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
2
.0
7
(
0
.500)
1
9
.0
5
(
0
.750)
Dia.
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2N6510 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
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