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參數(shù)資料
型號(hào): 2N6550
元件分類: 小信號(hào)晶體管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-46
文件頁數(shù): 1/1頁
文件大?。?/td> 92K
代理商: 2N6550
01/99
2N6550
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA =25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 20 V
Continuious Forward Gate Current
50 mA
Continuous Device Power Dissipation
400 mW
Power Derating
2.3 mW/°C
Junction Temperature (Operating & Storage)
– 65°C to +200°C
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
At 25°C free air temperature:
2N6550
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 20
V
IG = 10 A, VDS = V
Gate Leakage Current
IGSS
– 3
nA
VGS = – 10V, VDS = V
– 0.1
A
VGS = – 10V, VDS = V
TA = 85°C
Zero Gate Voltage Drain Current (Pulsed)
IDSS
10
100
250
mA
VDS = 10V, VGS = V
Gate Source Cutoff Voltage
VGS(OFF)
– 0.3
– 3
V
VDS = 10V, ID = 0.1 mA
Dynamic Electrical Characteristics
Transconductance
gfs
25
150
mS
VDS = 10V, ID = 10 mA
f = 1 kHz
Common Source Output Conductance
|Yos|
150
S
VDS = 10V, ID = 10 mA
f = 1 kHz
Common Source Input Capacitance
Ciss
30
35
pF
VDS = 10V, ID = 10 mA
f = 140 kHz
Common Source Reverse Transfer Capacitance
Crss
10
20
pF
VDS = 10V, VDS = V
f = 140 kHz
1.4
2
nV/
√Hz VDS = 5V, ID = 10 mA
f = 1 kHz
Equivalent Short Circuit
eN
610
nV/
√Hz VDS = 5V, ID = 10 mA
f = 10 Hz
Input Noise Voltage
eN Total
0.4
0.6
Vrms
VDS = 5V, ID = 10 mA
f = 10 kHz
to 20 kHz
Equivalent Open Circuit Input Noise Current
i
N
0.1
pA/
√Hz RS < 100 K
f = 1 kHz
Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-27
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相關(guān)代理商/技術(shù)參數(shù)
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2N6551 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-202AC N 60V 1A 2W EBC
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2N6552N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-202VAR
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