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參數資料
| 型號： | 2N6578R1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | 2N6578R1 |
2N6578
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5560
Issue 1
NPN BIPOLAR
POWER DARLINGTON
TRANSISTOR
FEATURES
FAST SWITCHING
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
VCBO
Collector – Base Voltage (IE = 0)
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IB
Base Current
IC
Collector Current
PD
Power Dissipation @ TC = 25°C
RθJC
Thermal Resistance Junction to Case
TJ , TSTG
Operating and Storage Junction Temperature Range
120V
7V
250mA
15A
120W
1.46°C/W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO-3 (TO-204AA)
ABSOLUTE MAXIMUM RATINGS (T
c = 25°C unless otherwise stated)
Underside View
1 = Emitter
2 = Base
3 = Collector
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
APPLICATIONS
HIGH SPEED SWITCHING CIRCUITS
POWER AMPLIFIERS
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相關代理商/技術參數 |
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|---|---|
| 2N6579 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 12A 3PIN TO-3 - Bulk |
| 2N657A | 功能描述:兩極晶體管 - BJT Small Signal Transistor Gen Purp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N658 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 |
| 2N6580 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 10A 3PIN TO-3 - Bulk |
| 2N6581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 450V 10A 3PIN TO-3 - Bulk |
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