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參數(shù)資料
| 型號： | 2N6609 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 205K |
| 代理商： | 2N6609 |
1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
The 2N3773 and 2N6609 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications. These devices can
also be used in power switching circuits such as relay or solenoid drivers, dc to dc
converters or inverters.
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8 A, 4 V
VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
For Low Distortion Complementary Designs
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
140
Vdc
Collector–Emitter Voltage
VCEX
160
Vdc
Collector–Base Voltage
VCBO
160
Vdc
Emitter–Base Voltage
VEBO
7
Vdc
Collector Current — Continuous
— Peak (1)
IC
16
30
Adc
Base Current — Continuous
— Peak (1)
IB
4
15
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
150
0.855
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.17
_C/W
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3773/D
Motorola, Inc. 1995
2N3773
2N6609
PNP
NPN
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
140 VOLTS
150 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3789X | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N3716 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6609 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3 |
| 2N6609G | 功能描述:兩極晶體管 - BJT 16A 140V 150W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N661 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:alloy-junction germanium transistors |
| 2N6617 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | MICRO-X |
| 2N6618 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | SOT-100VAR |
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