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參數(shù)資料
| 型號(hào)： | 2N6660X |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 中文描述： | 1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 40K |
| 代理商： | 2N6660X |
DOC: 7083 iss 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
2N6660X
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
Switching Regulators
Converters
Motor Drivers
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
60V
±40V
±1.1A
±0.8A
±3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
(0.89
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6660 | N-Channel 60-V (D-S) Single and Quad MOSFETs |
| 2N6660 | TMOS SWITCHING FET TRANSISTORS |
| 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N6661JAN | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓90V,夾斷電流0.86A的N溝道增強(qiáng)型MOSFET晶體管) |
| 2N6661 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661 | 功能描述:MOSFET 90V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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