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參數(shù)資料
| 型號： | 2N6691 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 70K |
| 代理商： | 2N6691 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 538
Devices
Qualified Level
2N6676
2N6678
2N6691
2N6693
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N6676
2N6691
300
450
450
2N6678
2N6693
400
650
650
8.0
5.0
15
2N6691
2N6693
3.0
(3)
175
-65 to +200
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6676
2N6678
6.0
(2)
175
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
@ T
A
= 25
0
C
@ T
C
= 25
0
C
(1)
P
T
W
W
0
C
T
op;
T
stg
Symbol
R
θ
JC
Max.
1.0
Unit
0
C/W
2N6676, 2N6678
TO-3 (TO-204AA)*
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= 1.5 Vdc
V
CE
= 650 Vdc, V
BE
= 1.5 Vdc
Symbol
Min.
Max.
Unit
2N6676, 2N6691
2N6678, 2N6693
V
(BR)
CEO
300
400
Vdc
2N6676, 2N6691
2N6678, 2N6693
I
CEX
0.1
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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