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參數(shù)資料
| 型號： | 2N6718 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 36K |
| 代理商： | 2N6718 |
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
*Ptot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL 2N6716
2N6717
2N6718
UNIT
Collector-Base Voltage
VCBO
60
80
100
V
Collector-Emitter Voltage
VCEO
60
80
100
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb= 25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6716
2N6717
2N6718
UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
V(BR)CBO
60
80
100
V
IC=0.1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
80
100
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
555
V
IE=1mA, IC=0
Collector Cut-Off
Current
ICBO
1
A
A
A
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
Emitter Cut-Off
Current
IEBO
111
A
VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
0.35
0.5
0.35
0.5
0.35
VIC=250mA, IB=10mA*
IC=250mA,IB=25mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.2
V
IC=250mA, VCE=1V*
Static Forward
Current Transfer
Ratio
hFE
80
50
20
250
80
50
20
250
80
50
20
250
IC=50mA, VCE=1V*
IC=250mA, VCE=1V*
IC=500mA, VCE=1V*
Transition
Frequency
fT
50
500 50
500 MHz IC=50mA, VCE=10V
Collector Base
Capacitance
CCB
30
pF
VCE=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6716
2N6717
2N6718
3-6
C
B
E
Not Recommended for New Design
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相關(guān)代理商/技術(shù)參數(shù) |
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