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參數(shù)資料
| 型號： | 2N6766 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 2N6766 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
T4-LDS-0182 Rev. 1 (101484)
Page 1 of 5
DEVICES
LEVELS
2N6766
2N6766T1
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
200
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
30
Adc
Continuous Drain Current
TC = +100°C
ID2
19
Adc
Max. Power Dissipation
TC = +25°C
Ptl
150 (1)
W
Drain to Source On State Resistance
Rds(on)
0.085 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 19A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
200
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 200V, Tj = +125°C
VGS = 0V, VDS = 160V, Tj = +125°C
IDSS1
IDSS2
IDSS3
25
1.0
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID2 = 19A pulsed
VGS = 10V, ID1 = 30A pulsed
Tj = +125°C
VGS = 10V, ID2 = 24A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.055
0.065
0.094
Ω
Diode Forward Voltage
VGS = 0V, ID1 = 30A pulsed
VSD
1.9
Vdc
2N6766
TO-204AE (TO-3)
2N6766T1 (TO-254AA)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1 - Bulk |
| 2N6767 | 制造商:Harris Corporation 功能描述: |
| 2N6768 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 14A 2PIN TO-204AA - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 400V 14A TO-204 制造商:International Rectifier 功能描述:N CH MOSFET 400V 14A TO-204AA 制造商:International Rectifier 功能描述:N CH MOSFET, 400V, 14A, TO-204AA 制造商:International Rectifier 功能描述:N CH MOSFET, 400V, 14A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:400V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:2;RoHS Compliant: No |
| 2N6768_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6768JANTX | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 |
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