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參數資料
| 型號： | 2N6800 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | 2N6800 |
2N6800
LA B
MECHANICAL DATA
Dimensions in mm (inches)
S E M E
9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Peak Diode Recovery
3
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
dv/dt
T
J
, T
stg
R
q
JC
R
q
JCA
±20V
3A
2A
12A
25W
0.20W/°C
4V/ns
–55 to 150°C
5.0°C/W
175°C/W
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO39 – Package
Pin 2 – Gate
Notes
1) Pulse Test: Pulse Width
￡
300
m
s,
d ￡
2%
2) @ V
DD
= 50V , L
3
0.100mH , R
G
= 25
W
, Peak I
L
= 1.5A , Starting T
J
= 25°C
3) @ I
SD
￡
1.5A , di/dt
￡
50A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 7.5
W
N–CHANNEL
POWER MOSFET
FEATURES
AVALANCHE ENERGY RATED
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
SIMPLE DRIVE REQUIREMENTS
Pin 1 – Source
Also available in a low profile version.
Pin 3 – Drain
BV
DSS
I
D
R
DS(on)
400V
3.0A
1.0
W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6800_01 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCE-MENT POWER MOSFET |
| 2N6800JANTX | 制造商:International Rectifier 功能描述: |
| 2N6800LCC4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE |
| 2N6800U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6800UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 3A 18-Pin LLCC |
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