- 您現在的位置：買賣IC網 > PDF目錄33293 > 2N6800LCC4 (SEMELAB LTD) 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2N6800LCC4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC4-18 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2N6800LCC4 |
2N6800LCC4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7820, ISSUE 1
FEATURES
Dynamic dv/dt Rating
Simple Drive requirements
Ease of Paralleling
Hermetic Ceramic Surface Mount Package
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
BV
DSS
400V
ID
3.0A
R
DS(on)
1.0
LCC4 CERAMIC SURFACE
MOUNT PACKAGE
GATE
DRAIN
SOURCE
PINS 4,5
PINS 1,2,15,16,17,18
PINS 6,7,8,9,10,11,12,13
D
G
S
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈ 2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS T
CASE = 25°C unless otherwise stated
V
DSS
Drain - Source Voltage
400V
I
D
Drain Current
- Continuous (V
GS = 10V, TC = 25°C)
3A
- Continuous (V
GS = 10V, TC = 100°C)
2A
I
DM
Drain Current
- Pulsed
2
12A
V
GSS
Gate - Source Voltage
±20V
P
tot
Total Power Dissipation at T
case ≤ 25°C
25W
De-rate Linearly above 25°C
0.20W/°C
T
j,Tstg
Operating and Storage Junction Temperature Range
-55 to +150°C
R
thj-mb
Thermal Resistance Junction – Mounting Base
5.0°C/W
dv/dt
Peak Diode Recovery
3
4V/ns
NOTES:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width
≤ 380S, Duty Cycle, δ 2%
3) T
J ≤ 150°C, VDD ≤ BVDSS, Suggested RG = 7.5 , ISD ≤ 1.5A, di/dt ≤ 50A/s
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TX | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TX | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6800U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6800UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 3A 18-Pin LLCC |
| 2N6801 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-39 |
| 2N6802 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 11A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 2.5A 3PIN TO-39 - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:International Rectifier 功能描述:MOSFET N TO-39 制造商:International Rectifier 功能描述:N CH MOSFET 500V 2.5A TO-20 制造商:International Rectifier 功能描述:MOSFET, N, TO-39 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 2.5A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| 2N6802JANTX | 制造商:International Rectifier 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。