
3–1
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
Switchmode Series Ultra-Fast
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications.
Switching Regulators
Inverters
Motor Controls
Deflection Circuits
Fast Turn–Off Times
30 ns Inductive Fall Time — 75
_C (Typ)
50 ns Inductive Crossover Time — 75
_C (Typ)
600 ns Inductive Storage Time — 75
_C (Typ)
Operating Temperature Range –65 to +200_C
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS (2)
Rating
Symbol
Max
Unit
Collector–Emitter Voltage
VCEO(sus)
450
Vdc
Collector–Emitter Voltage
VCEV
850
Vdc
Emitter Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
15
20
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
10
15
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
175
100
1.0
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5.0 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
(2) Indicate JEDEC Registered Data.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6836/D
Motorola, Inc. 1995
2N6836
15 AMPERE
NPN SILICON
POWER TRANSISTOR
450 VOLTS
175 WATTS
CASE 1–07
TO–204AA
(TO–3)