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參數資料
| 型號： | 2N697S |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR |
| 中文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 63K |
| 代理商： | 2N697S |
TECHNICAL DATA
NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 99
Devices
Qualified Level
2N696
2N696S
2N697
2N697S
MAXIMUM RATINGS
Ratings
Symbol
V
CBO
V
EBO
Value
60
5.0
0.6
2.0
-65 to +200
Units
Vdc
Vdc
W
W
0
C
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 4.0 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 13.3 mW/
0
C for T
C
> 25
0
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Max.
0.075
Unit
0
C/mW
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
R
BE
= 10
, I
C
= 100 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)
CER
40
Vdc
I
CBO
10
0.1
10
μ
Adc
I
EBO
μ
Adc
2N696,s
2N697,s
2N696,s
2N697,s
h
FE
20
40
12.5
20.0
0.3
60
120
V
CE(sat)
1.5
1.3
Vdc
V
BE(sat)
Vdc
120101
Page 1 of 2
TO-5*
JAN
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