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參數資料
| 型號： | 2N6987JANTXV |
| 廠商： | Microsemi Corporation |
| 英文描述： | MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
| 中文描述： | 多重進步黨硅開關晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | 2N6987JANTXV |
0600
Polarity PNP
Qual Level: JAN - JANS
Data S heet No. 2N6987
Generic Part Number:
2N6987
REF: MIL-PRF-19500/558
Features:
An array of four independent PNP
silicon switching transistors.
Housed in a
cerdip
case.
Also available in chip form using
the
0600
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/558
which
Semicoa meets in all cases.
The
Typ
values are actual batch
averages for Semicoa.
Radiation Graphs available.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current, Continuous
I
C
600
mA
Operating Junction Temperature
T
J
-65 to +200
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
Cerdip
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| 2N6987UJANTX | MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
| 2N6987UJANTXV | MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
| 2N698 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6987U | 功能描述:兩極晶體管 - BJT Quad PNP Transistor 20 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6987UJAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
| 2N6987UJANS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
| 2N6987UJANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
| 2N6987UJANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MULTIPLE PNP SILICON SWITCHING TRANSISTOR |
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