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參數資料
| 型號： | 2N7000ZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Compact Power Relay, 2 Form C, 10A 250VAC 10A 30VDC |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | CASE 29-11, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 232K |
| 代理商： | 2N7000ZL1 |
FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DMOS Transistors (N-Channel)
G
D
S
.181 (4.6)
mi
n.
.492
(12.5)
.181
(
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
2N7000
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Inverse Diode
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage
VDGS
60
V
Gate-Source Voltage (pulsed)
VGS
± 20
V
Drain Current (continuous)
ID
300
mA
Power Dissipation at Tamb = 25 °C
Ptot
8301)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Symbol
Value
Unit
Max. Forward Current (continuous)
at Tamb = 25 °C
IF
500
mA
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.5 A, Tj = 25 °C
VF
850
mV
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7000ZL-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7000ZL-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7000ZL-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
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