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參數資料
| 型號： | 2N7002-01 |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 14K |
| 代理商： | 2N7002-01 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
2N7002CSM
* Pulse width limited by maximum junction temperature.
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
V
(BR)DSS
= 60V
RDS
(ON)
= 7.5
I
D
= 0.115A
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
60V
±40V
±0.115A
±0.073A
0.8A
200mW
80mW
–55 to 150°C
–55 to 150°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
SOT23 CERAMIC
(LCC1 PACKAGE)
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
PAD 1 – Gate
Underside View
PAD 2 – Source
PAD 3 – Drain
相關PDF資料 |
PDF描述 |
|---|---|
| 2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002 | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002 | Mini size of Discrete semiconductor elements |
| 2N7002LT1 | CASE 318-08, STYLE 21 SOT-23 (TO-236AB) |
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| 2N7002215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 300MA 3-SOT-23 |
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| 2N70027 | 制造商:Diodes Incorporated 功能描述: 制造商:Vishay Intertechnologies 功能描述: |
| 2N7002-7 | 功能描述:MOSFET 60V 200mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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