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參數資料
| 型號： | 2N7002BKM |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60 V, 450 mA N-channel Trench MOSFET |
| 中文描述： | 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN |
| 文件頁數： | 1/16頁 |
| 文件大小： | 329K |
| 代理商： | 2N7002BKM |
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.01.
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
Rev. 1 — 25 October 2010
Product data sheet
BOTTOM VIEW
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C;
V
GS
= 10 V
T
j
= 25
°
C;
V
GS
= 10 V;
I
D
= 500 mA
Min
-
-
Typ
-
-
-
Max
60
±
20
450
Unit
V
V
mA
[1]
-
R
DSon
drain-source on-state
resistance
[2]
-
1
1.6
Ω
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| 2N7002BKT | 60 V, 290 mA N-channel Trench MOSFET |
| 2N7002BKV | 60 V, 340 mA dual N-channel Trench MOSFET |
| 2N7002E | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7002BKM,315 | 功能描述:MOSFET Single N-Channel 60V 300mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002BKMB | 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 450MA, SOT883B 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 450MA, SOT883B; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V ;RoHS Compliant: Yes |
| 2N7002BKMB,315 | 功能描述:MOSFET N-Chan 60V 450mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002BKMB315 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| 2N7002BKS | 制造商:NXP Semiconductors 功能描述:MOSFET NN CH 60V 0.3A SOT363 制造商:NXP Semiconductors 功能描述:MOSFET, NN CH, 60V, 0.3A, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET, NN CH, 60V, 0.3A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; No. of Pins:6;RoHS Compliant: Yes |
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