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參數資料
型號: 2N7002CSM-QR-B
廠商: SEMELAB LTD
元件分類: 小信號晶體管
英文描述: 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: HERMETIC SEALED, CERAMIC, LCC1-3
文件頁數: 1/3頁
文件大?。?/td> 174K
代理商: 2N7002CSM-QR-B
N-CHANNEL ENHANCEMENT
MODE MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
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Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8550
Issue 1
Page 1 of 3
2N7002CSM
VDSS = 60V , ID = 115mA, RDS(ON) = 7.5
Fast Switching
Low Threshold Voltage
Integral Source-Drain Body Diode
Hermetic Ceramic Surface Mount Package (SOT-23 compatible)
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
60V
VGS
Gate – Source Voltage
±40V
ID
Continuous Drain Current
TC = 25°C
115mA
ID
Continuous Drain Current
TC = 100°C
75mA
IDM
Pulsed Drain Current
(1)
800mA
PT
Total Power Dissipation at
TA ≤ 25°C
350mW
De-rate TC > 25°C
2.8mW/°C
TJ
Operating Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Max
Units
RθJA
Thermal Resistance, Junction To Ambient
357
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
相關PDF資料
PDF描述
2N7002DCSM-JQR-A 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002DCSM-JQR 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002DWT/R7 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002E-E3 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002FN3T/R 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關代理商/技術參數
參數描述
2N7002-D87Z 功能描述:MOSFET N-CH 60V 0.115A SOT23 制造商:on semiconductor 系列:- 包裝:剪切帶(CT) 零件狀態:Digi-Key 停止供應 FET 類型:N 溝道 技術:MOSFET(金屬氧化物) 漏源電壓(Vdss):60V 電流 - 連續漏極(Id)(25°C 時):115mA(Ta) 驅動電壓(最大 Rds On,最小 Rds On):5V,10V 不同 Id 時的 Vgs(th)(最大值):2.5V @ 250μA Vgs(最大值):±20V 不同 Vds 時的輸入電容(Ciss)(最大值):50pF @ 25V FET 功能:- 功率耗散(最大值):200mW(Ta) 不同?Id,Vgs 時的?Rds On(最大值):7.5 歐姆 @ 500mA,10V 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 供應商器件封裝:SOT-23(TO-236AB) 封裝/外殼:TO-236-3,SC-59,SOT-23-3 基本零件編號:2N7002 標準包裝:1
2N7002DCSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N7002DSPT 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:Dual N-Channel Enhancement MOS FET
2N7002DW 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002DW _R1 _00001 制造商:PanJit Touch Screens 功能描述:
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