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參數資料
| 型號： | 2N7002T-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 444K |
| 代理商： | 2N7002T-7-F |
DS30301 Rev. 8 - 2
1 of 4
2N7002T
www.diodes.com
Diodes Incorporated
2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
·
·
·
·
·
·
·
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
￡
1.0M
W
V
DGR
60
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Total Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
q
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Mechanical Data
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking: 72 (See Page 3)
Ordering & Date Code Information, See Page 3
Weight: 0.002 grams (approximate)
·
·
·
·
·
·
·
·
C
U
D
O
R
P
W
E
N
A
M
J
L
D
B
D
G
C
S
H
K
G
TOP VIEW
N
SOT-523
Min
Dim
A
B
C
D
G
H
J
K
L
M
N
Max
Typ
0.15
0.30
0.22
0.75
0.85
0.80
1.45
1.75
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.00
0.10
0.05
0.60
0.80
0.75
0.10
0.30
0.22
0.10
0.20
0.12
0.45
0.65
0.50
a
0
°
8
°
All Dimensions in mm
Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Source
Gate
Drain
相關PDF資料 |
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|---|---|
| 2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VA | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VA-7-L | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V-7-L | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002W-7-F | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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