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參數(shù)資料
| 型號(hào)： | 2N7002V-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 75K |
| 代理商： | 2N7002V-7 |
DS30448 Rev. 3 - 2
1 of 3
2N7002V/VA
www.diodes.com
Diodes Incorporated
2N7002V/VA
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60
V
Gate-Source Voltage (Note 3)
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 3)
Continuous
I
D
280
mA
Drain Current (Note 3)
Pulsed
I
DM
1.5
A
Total Power Dissipation
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
A
M
L
B C
H
K
G
D
Mechanical Data
S
1
D
1
D
2
S
2
G
1
G
2
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
SOT-563
Min
Dim
A
B
C
D
G
H
K
L
M
Max
Typ
0.15
0.30
0.25
1.10
1.25
1.20
1.55
1.70
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.56
0.60
0.60
0.10
0.30
0.20
0.10
0.18
0.11
All Dimensions in mm
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
3. No purposefully added Lead.T
C
U
D
O
R
P
W
E
N
2N7002V
(KAS Marking Code)
G
1
D
1
D
2
S
2
S
1
G
2
2N7002VA
(KAY Marking Code)
SEE NOTE 1
SPICE MODEL: 2N7002V/VA
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| 2N7002VAC | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VAC-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VC | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VC-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002V-7-F | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002V-7-L | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VA | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002VA-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002VA-7-F | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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