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參數資料
| 型號： | 2N7051 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor |
| 中文描述： | 1500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | 2N7051 |
2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
A
=25
°
C unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage *
BV
CBO
Collector-Base Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
CES
I
EBO
Emitter Cut-off Current
On Characteristics *
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
Parameter
Ratings
100
100
12
1.5
-55 ~ 150
Units
V
V
V
A
°
C
Test Condition
Min.
Typ.
Max.
Units
I
C
= 1.0mA, I
B
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 1.0mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 80V, I
E
= 0
V
EB
= 7.0V, I
C
= 0
100
100
12
V
V
V
μ
A
μ
A
μ
A
0.1
0.2
0.1
V
CE
= 5.0V, I
C
= 100mA
V
CE
= 5.0V, I
C
= 1.0A
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
BE
=5.0V
10,000
1,000
20,000
1.5
2.0
V
CE
(sat)
V
BE
(sat)
Small Signal Characteristics
f
T
Transition Frequency
h
fe
Small Signal Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
I
C
= 100mA, V
CE
=5.0V
V
CE
=5.0V, I
C
= 100mA,
f = 20MHz
200
10
MHz
100
1. Emitter 2. Collector 3. Base
2N7051
NPN Darlington Transistor
This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
Sourced from Process 06.
See 2N7052 for Characteristics.
TO-92
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7051_D10Z | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N7051_J61Z | 功能描述:達林頓晶體管 HIGH VOLTAGE NPN DARLINGTON TR. RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N7051_Q | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N7052 | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N7052_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
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