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參數(shù)資料
| 型號(hào)： | 2N7336 |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, DIP-14 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 42K |
| 代理商： | 2N7336 |
2N7336
IRFG6110
4/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS
Single Pulse Avalanche Energy 2
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
RθJC
Thermal Resistance Junction to Case
RθJCA
Thermal Resistance Junction-to-Ambient
±20V
1.A
0.6A
4A
1.4W
0.011W/°C
75mJ
5.5V/ns
–55 to 150°C
±20V
-0.75A
-0.5A
-3A
1.4W
0.011W/°C
75mJ
-5.5V/ns
–55 to 150°C
MECHANICAL DATA
Dimensions in mm (inches)
14
1
8
7
2.134
(0.084)
6.
42
6
±
0.3
0
5
(0
.2
53
±
0
.0
12)
9.
52
5
±
0.6
3
5
(0
.3
75
±
0
.0
25)
1.422 ± 0.102
(0.056 ± 0.004)
2.54
(0.100)
0.457 ± 0.102
(0.018 ± 0.004)
19.507 ± 0.432
(0.768 ± 0.017)
ABSOLUTE MAXIMUM RATINGS(T
case = 25°C unless otherwise stated)
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) @ VDD = 25V , L ≥ 112mH , RG = 25 , Peak IL = 1A , Starting TJ = 25°C
3) @ ISD ≤ 1A , di/dt ≤ 75A/s , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 24
14 LEAD DUAL IN LINE QUAD
N & P CHANNEL
POWER MOSFETS
FEATURES
AVALANCHE ENERGY RATED
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
SIMPLE DRIVE REQUIREMENTS
FOR AUTOMATIC INSERTION
SIMPLE DRIVE REQUIREMENTS
EASE OF PARALLELING
2 N-CHANNEL/2 P-CHANNEL
CO-PACKAGED HEXFETS
N-CHANNEL
1—Drain 1
2—Source 1
3—Gate 1
P-CHANNEL
5—Gate 2
6—Source 2
7—Drain 2
N-CHANNEL
8—Drain 3
9—Source3
10—Gate 3
P-CHANNEL
12—Gate 4
13—Source 4
14—Drain 4
N-CHANNEL
P-CHANNEL
ID(cont)
1A
-0.75A
RDS(on)
0.7
1.4
BVDSS
±100V
N-CHANNEL
P-CHANNEL
6.25°C/W
175°C/W
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