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參數資料
| 型號： | 2N7368 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 10A條一（c）|至254 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | 2N7368 |
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 622
Devices
Qualified Level
2N7368
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Value
80
80
7.0
4.0
10
115
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1)
Derate linearly 0.657 W/
0
C for T
C
> 25
0
C
@ T
C
= 25
0
C
(1)
Symbol
R
θ
JC
Max.
1.5
Unit
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 0.2 Adc
Collector-Emitter Cutoff Current
V
CE
= 70 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
CEO
(
sus
)
I
CES
I
CEX
I
EBO
80
Vdc
mAdc
mAdc
mAdc
1.0
1.0
1.0
120101
Page 1 of 2
TO-254*
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相關代理商/技術參數 |
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|---|---|
| 2N7368JAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN HIGH POWER SILICON TRANSISTOR |
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| 2N7369JAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
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