- 您現在的位置：買賣IC網 > PDF目錄33300 > 2N7381 (MICROSEMI CORP-LAWRENCE) 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA PDF資料下載
參數資料
| 型號： | 2N7381 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | TO-257AA, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 149K |
| 代理商： | 2N7381 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/614
T4-LDS-0124 Rev. 1 (091145)
Page 1 of 4
DEVICES
LEVELS
2N7381
JANSM (3K RAD(Si))
JANSD (10K RAD(Si))
JANSR (100K RAD(Si))
JANSF (300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
200
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
9.4
Adc
Continuous Drain Current
TC = +100°C
ID2
6.0
Adc
Max. Power Dissipation
Ptl
75 (1)
W
Drain to Source On State Resistance
Rds(on)
0.40 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 12Vdc, ID = 6.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
200
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C
VDS ≥ VGS, ID = 1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 160V, Tj = +125°C
IDSS1
IDSS2
25
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 12V, ID = 6.0A pulsed
VGS = 12V, ID = 9.4A pulsed
Tj = +125°C
VGS = 12V, ID = 6.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0..40
0.49
0.75
Ω
Diode Forward Voltage
VGS = 0V, ID = 9.4A pulsed
VSD
1.4
Vdc
TO-257AA
JANSR2N7381, JANSF2N7381
See Figure 1
相關PDF資料 |
PDF描述 |
|---|---|
| 2N744 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N744 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N743 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N757A | 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N0720A | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N739 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 |
| 2N7395 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| 2N7396 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N7398 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF |
| 2N740 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN LO-PWR BJT |
發布緊急采購，3分鐘左右您將得到回復。