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參數(shù)資料
| 型號(hào)： | 2N7382 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | TO-257AA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 214K |
| 代理商： | 2N7382 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
T4-LDS-0125 Rev. 1 (091145)
Page 1 of 4
DEVICES
LEVELS
2N7382
JANSM (3K RAD(Si))
JANSD (10K RAD(Si))
JANSR(100K RAD(Si))
JANSF(300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
-100
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
-11.0
Adc
Continuous Drain Current
TC = +100°C
ID2
-7.0
Adc
Max. Power Dissipation
Ptl
75 (1)
W
Drain to Source On State Resistance
Rds(on)
0.3 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = -12Vdc, ID = -7.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
V(BR)DSS
-100
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -1.0mA
VDS ≥ VGS, ID = -1.0mA, Tj = +125°C
VDS ≥ VGS, ID = -1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
IDSS1
IDSS2
-25
-0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = -12V, ID = -7.0A pulsed
VGS = -12V, ID = -11.0A pulsed
Tj = -125°C
VGS = -12V, ID = -7.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.3
0.35
0.54
Ω
Diode Forward Voltage
VGS = 0V, ID = -11.0A pulsed
VSD
-3.0
Vdc
TO-257AA
JANSM2N7382, JANSD2N7382,
JANSR2N7382, JANSF2N7382
See Figure 1
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