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參數(shù)資料
| 型號(hào)： | 2N7608T2 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 100 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 209K |
| 代理商： | 2N7608T2 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 4.5V, TC=25°C
Continuous Drain Current
6.0
ID @ VGS = 4.5V, TC=100°C Continuous Drain Current
3.7
IDM
Pulsed Drain Current
24
PD @ TC = 25°C
Max. Power Dissipation
21
W
Linear Derating Factor
0.18
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
37
mJ
IAR
Avalanche Current
6.0
A
EAR
Repetitive Avalanche Energy
2.1
mJ
dv/dt
Peak Diode Recovery dv/dt
4.9
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in/1.6mm from case for 10s)
Weight
0.98 (Typical)
g
°C
A
10/05/10
www.irf.com
1
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLF77110
100K Rads (Si)
0.32
6.0A
IRHLF73110
300K Rads (Si)
0.32
6.0A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLF77110
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
T0-39
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Light Weight
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
2N7608T2
PD-97062B
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