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參數(shù)資料
型號: 2N7624U3
元件分類: JFETs
英文描述: 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
文件頁數(shù): 1/9頁
文件大小: 203K
代理商: 2N7624U3
Absolute Maximum Ratings
Parameter
Units
ID @VGS = -4.5V,TC = 25°C Continuous Drain Current
-22*
ID @VGS = -4.5V,TC = 100°C Continuous Drain Current
-14.9
IDM
Pulsed Drain Current
-88
PD @ TC = 25°C
Max. Power Dissipation
57
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
79
mJ
IAR
Avalanche Current
-22
A
EAR
Repetitive Avalanche Energy
5.7
mJ
dv/dt
Peak Diode Recovery dv/dt
-12.3
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
Pre-Irradiation
°C
A
RADIATION HARDENED
IRHLNJ797034
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
10/05/10
www.irf.com
1
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level
RDS(on)
ID
IRHLNJ797034
100K Rads (Si)
0.072
22A*
IRHLNJ793034
300K Rads (Si)
0.072
22A*
For footnotes refer to the last page
SMD-0.5
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n Surface Mount
n Light Weight
International Rectifier’s R7
TM Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
* Current is limited by package
2N7624U3
PD-97302A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2N7636-GA 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N7637-GA 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N7638 制造商:Motorola 功能描述:2N7638 TO92 MOT N9H1C
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