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參數資料
| 型號： | 2N918 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-72 |
| 封裝： | TO-72, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 97K |
| 代理商： | 2N918 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/301
T4-LDS-0010 Rev. 1 (072019)
Page 1 of 2
DEVICES
LEVELS
2N918
2N918UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Collector Current
IC
50
mAdc
Total Power Dissipation @ T
A = +25°C
(1)
PT
200
mW
Operating & Storage Junction Temperature Range
Top & Tstg
-65 to +200
°C
1) Derate linearly 1.14mW/°C above T
A > 25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc
V(BR)CEO
15
Vdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
ICBO
1.0
10
Adc
ηAdc
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
IEBO
10
Adc
ηAdc
Forward-Current Transfer Ratio
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
hFE
10
20
200
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
VCE(sat)
0.4
Vdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc
VBE(sat)
1.0
Vdc
TO-72
2N918
3 PIN
2N918UB
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