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參數(shù)資料
| 型號(hào)： | 2PG301 |
| 廠商： | PANASONIC CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 20 A, 400 V, N-CHANNEL IGBT |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 175K |
| 代理商： | 2PG301 |
s Electrical Characteristics (Tc = 25C)
IGBTs
2PG301
2PG301
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage : VCES= 400V
q Large current control possible : IC(peak)=130A
q Housing in the surface mounting package possible
s Applications
q For camera flash-light
s Absolute Maximum Ratings (Tc = 25C)
Parameter
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
DC
Pulse
Allowable power
TC= 25C
dissipation
Ta= 25C
Channel temperature
Storage temperature
Symbol
VCES
VGES
IC
ICP
PC
Tch
Tstg
Rating
400
±40
20
130
45
1.3
150
– 55 to +150
Unit
V
A
W
C
Unit : mm
1 : Gate
2 : Collector
3 : Emitter
N Type Package
Parameter
Collector-Emitter cut-off current
Gate-Emitter leakage current
Collector-Emitter breakdown voltage
Gate threshold voltage
Collector-Emitter saturation
voltage
Input capacitance
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
Condition
VCE= 320V, VGE= 0
VGE= ± 40V, VCE= 0
IC=1mA, VGE= 0
VCE=10V, IC=1mA
VGE= 24V, IC= 20A
VGE= 24V, IC=130A
VCE=10V, VGE= 0, f=1MHz
VCC= 340V, IC=130A
VGE= 24V, Rg= 25
Min
400
3
Typ
5.5
1450
25
300
250
2.0
Max
10
±1
7
2.25
10
Unit
A
V
pF
ns
s
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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