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參數資料
| 型號： | 2S2M |
| 廠商： | NEC Corp. |
| 英文描述： | THYRISTORS 2 A HIGH-SPEED SWITCHING SCR |
| 中文描述： | 晶閘管2甲高速開關晶閘管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 188K |
| 代理商： | 2S2M |
2002
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
FEATURES
This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
TSM
I
TRM
∫
i
t
2
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
2S2M
300
300
200
200
2S4M
500
500
400
400
Ratings
V
V
V
V
A
A
A
A
A/
μ
s
W
W
A
V
°
C
°
C
Unit
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Surge on-state current
High-frequency peak on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
R
GK
= 1 k
R
GK
= 1 k
R
GK
= 1 k
R
GK
= 1 k
2 (Tc = 77
°
C, Single half-wave,
θ
= 180
°
)
20 (f = 50 Hz, Sine half-wave, 1 cycle)
15 (Tc = 65
°
C, f = 10 kp.p.s, t
p
= 10
μ
s)
1.6 (1 ms
≤
t
≤
10 ms)
50
0.5 (f
≥
50 Hz, Duty
≤
10%)
0.1
0.2 (f
≥
50 Hz, Duty
≤
10%)
6
40 to +125
55 tp +150
Refer to Figure 6 snd 7.
Refer to Figure 2.
2
s
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
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|---|---|
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