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參數資料
| 型號： | 2SA0885S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 |
| 中文描述： | 1 A, 35 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | 2SA0885S |
Power Transistors
2SA0885
Silicon PNP epitaxial planar type
1
(2SA885)
For low-frequency power amplification
Complementary to 2SC1846
I
Features
Output of 3 W can be obtained by a complementary pair with
2SC1846
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I
Absolute Maximum Ratings
T
C
=
25
°
C
1: Emitter
2: Collector
3: Base
TO-126B Package
Unit: mm
I
Electrical Characteristics
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
45
35
5
1.5
1
1.2
*1
5
*2
V
Collector to emitter voltage
V
CEO
V
EBO
I
CP
V
Emitter to base voltage
V
Peak collector current
A
Collector current
I
C
P
C
A
Collector power dissipation
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
0.1
100
10
Unit
μ
A
μ
A
μ
A
Collector cutoff current
I
CBO
I
CEO
V
CB
=
20 V, I
E
= 0
V
CE
=
20 V, I
B
= 0
V
EB
=
5V, I
C
= 0
I
C
=
10
μ
A, I
E
= 0
I
C
=
2 mA, I
B
= 0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 50 mA, f = 200 MHz
V
CB
=
10 V, I
E
= 0, f = 1 MHz
Emitter cutoff current
I
EBO
V
CBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
Collector to base voltage
45
35
V
Collector to emitter voltage
V
Forward current transfer ratio
85
340
50
Collector to emitter saturation voltage
0.5
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
20
30
pF
Note)*: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Note)*1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
8.0
+0.5
1
±
3
±
3
±
1
±
1
±
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
1
2
3
φ
3.16
±0.1
Note.) The Part number in the Parenthesis shows conventional part number.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA0886 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 2SA0886(2SA886) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0886 (2SA886) - PNP Transistor |
| 2SA08860Q | 功能描述:TRANS PNP HF 40VCEO 1.5A TO-126 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA0886Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
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