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參數(shù)資料
| 型號： | 2SA1010L |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 100V的五（巴西）總裁| 7A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 118K |
| 代理商： | 2SA1010L |
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
7.0
A
Collector current (pulse)
I
C(pulse)
*
15
A
Base current (DC)
I
B(DC)
3.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
40
W
Total power dissipation
P
T
(Ta = 25
°
C)
1.5
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
300
μ
s, duty cycle
≤
10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1010M | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1010 | SILICON POWER TRANSISTOR |
| 2SA1011D | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB |
| 2SA1011 | PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
| 2SA1011 | POWER TRANSISTORS(1.5A,160V,25W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1010-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1010M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SA1011 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB 制造商:SANYO Semiconductor Co Ltd 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SA1011D | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB |
| 2SA1011E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB |
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